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Low Reverse Saturation Current Density of Amorphous Silicon Solar Cell Due to Reduced Thickness of Active Layer
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | Journal of electrical engineering technology |
| ISSN | 1975-0102, |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | Iftiquar, S M,Yi, Junsin |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2016-01-01 |
| 초록 | One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N d ) of the active layer on the J-V curve. When the active layer thickness was varied (for N d = 8 #xD7;10 17 cm -3 ) from 800 nm to 100 nm, the reverse saturation current density (J o ) changed from 3.56 #xD7;10 -5 A/cm 2 to 9.62 #xD7;10 -11 A/cm 2 and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N d = 4 #xD7;10 15 cm -3 ), the n remained within 1.45 #x2264;n #x2264;1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J o = 9.62 #xD7;10 -11 A/cm 2 ) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO201620240602791 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| DDC 분류 | |
| 주제어 (키워드) | Amorphous silicon solar cell,Diode equivalent model,Active layer thickness |