| 초록 |
In this study, we developed the solution-processed PMMA- $HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA- $HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$ -based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA- $HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$ -based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA- $HfO_x$ hybrid ReRAM and $HfO_x$ -based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA- $HfO_x$ films showed an excellent flexibility without defect generation. |
