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논문 기본정보
lt;TEX gt;$LiNbO_3$ lt;/TEX gt; 강유전체를 이용한 MFISFET의 제작 및 특성
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | 전기학회논문지. The Transactions of the Korean Institute of Electrical Engineers. P |
| ISSN | 1229-800x, |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | 정순원,구경완 |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2008-01-01 |
| 초록 | MFISFETs with platinum electrode on the $LiNbO_3$ /aluminum nitride/Si(100) structures were successfully fabricated and the properties of the FETs have been discussed. $I_D-V_G$ characteristics of MFISFETs for linear region (that is, 0.1 V of the drain voltage) showed hysteresis loop with a counter-clockwise trace due to the ferroelectric nature of $LiNbO_3$ films. A memory window (i.e., threshold voltage shift) of the fabricated device was about 2[V] for a sweep from -4 to +4[V]. The estimated field-effect electron mobility and transconductance on a linear region were 530[ $cm^2/V{ cdot}s$ ] and 0.16[mS/mm], respectively. The drain current of 27[ ${ mu}A$ ] on the 'on' state was more than 3 orders of magnitude larger than that of 30[nA] on the 'off' state at the same 'read' gate voltage of l.5[V], which means the memory operation of the MFISFET. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO200818133147085 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| DDC 분류 | |
| 주제어 (키워드) | 강유전체,히스테리시스,질화알루미늄, lt,TEX gt,$LiNbO_3$ lt,/TEX gt,. MFISFET,FRAM |