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논문 기본정보
졸겔법에 의해 제작된 강유전체 BST막의 기계.화학적인 연마 특성
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | 전기학회논문지. The transactions of the Korean Institute of Electrical Engineers. C/ C, 전기물성 middot;응용부문 |
| ISSN | 1229-246x, |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | 서용진,박성우 |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2004-01-01 |
| 초록 | The perovskite ferroelectric materials of the PZT, SBT and BST series will attract much attention for application to ULSI devices. Among these materials, the BST ( $Ba_0.6$ $Sr_0.4$ / $TiO_3$ ) is widely considered the most promising for use as an insulator in the capacitors of DRAMS beyond 1 Gbit and high density FRAMS. Especially, BST thin films have a good thermal-chemical stability, insulating effect and variety of Phases. However, BST thin films have problems of the aging effect and mismatch between the BST thin film and electrode. Also, due to the high defect density and surface roughness at grain boundarys and in the grains, which degrades the device performances. In order to overcome these weakness, we first applied the chemical mechanical polishing (CMP) process to the polishing of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ferroelectric film was fabricated by the sol-gel method. And then, we compared the surface characteristics before and after CMP process of BST films. We expect that our results will be useful promise of global planarization for FRAM application in the near future. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO200411922301557 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| DDC 분류 | |
| 주제어 (키워드) | Chemical mechanical polishing (CMP),Sol-Gel,BaSrTiO lt,TEX gt,$_3$ lt,/TEX gt,(BST),PbZrTiO lt,TEX gt,$_3$ lt,/TEX gt,(PZT),SrBi lt,TEX gt,$_2$ lt,/TEX gt,Ta lt,TEX gt,$_2$ lt,/TEX gt,O lt,TEX gt,$_{}$ lt,/TEX gt,9/ (SBT),ferro-electric random access memory(FRAM),dynamic random access memory(DRAM) |