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논문 기본정보
ZnO 나노와이어를 이용한 FET 소자 제작 및 특성 평가
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | 한국표면공학회지 = Journal of the Korean institute of surface engineering |
| ISSN | 1225-8024, |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | 김경원,오원석,장건익,박동원,이정오,김범수 |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2008-01-01 |
| 초록 | The zinc oxide(ZnO) nanowires were deposited on Si(001) substrates by thermal chemical vapour deposition without any catalysts. SEM data suggested that the grown nanostructures were the well-aligned ZnO single crystals with preferential orientation. Back-gate ZnO nanowire field effect transistors(FET) were successfully fabricated using a photolithography process. The fabricated nanowire FET exhibits good contact between the ZnO nonowire and Au metal electrodes. Based on I-V characteristics it was found out that the ZnO nanowire revealed a characteristic of n-type field effect transistor. The drain current increases with increasing drain voltage, and the slopes of the $I_{ds}-V_{ds}$ curves are dependent on the gate voltage. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO200814364665152 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| DDC 분류 | |
| 주제어 (키워드) | ZnO nanowire,FET,Thermal CVD |