ArF 포토리소그라피공정을 위한 실리콘이 함유된 반사방지막코팅
기관명 | NDSL |
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저널명 | 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19 |
ISSN | , |
ISBN |
저자(한글) | 이준호,김형기,김명웅,임영택,박주현 |
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저자(영문) | |
소속기관 | |
소속기관(영문) | |
출판인 | |
간행물 번호 | |
발행연도 | 2006-01-01 |
초록 | Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy). |
원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NPAP&cn=NPAP08613879 |
첨부파일 |
과학기술표준분류 | |
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ICT 기술분류 | |
DDC 분류 | |
주제어 (키워드) |