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논문 기본정보

비-휘발성 저항 변화 메모리 응용을 위한 WOx 물질의 전기적 특성 연구

논문 개요

기관명, 저널명, ISSN, ISBN 으로 구성된 논문 개요 표입니다.
기관명 NDSL
저널명 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers
ISSN 1226-7945,
ISBN

논문저자 및 소속기관 정보

저자, 소속기관, 출판인, 간행물 번호, 발행연도, 초록, 원문UR, 첨부파일 순으로 구성된 논문저자 및 소속기관 정보표입니다
저자(한글) 정균호,김경민,송승곤,박윤선,박경완,석중현
저자(영문)
소속기관
소속기관(영문)
출판인
간행물 번호
발행연도 2016-01-01
초록 In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${ rightarrow}$ Trap-Controlled Space Charge Limited Current ${ rightarrow}$ Ohm's Law) process in the positive voltage region.
원문URL http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO201615139870769
첨부파일

추가정보

과학기술표준분류, ICT 기술분류,DDC 분류,주제어 (키워드) 순으로 구성된 추가정보표입니다
과학기술표준분류
ICT 기술분류
DDC 분류
주제어 (키워드) ReRAM,Bipolar resistive switching,Migration of oxygen ion,Trap-controlled space charge limited current