| 초록 |
SBN60 and SBN60/30 thin films were deposited by ion beam sputtering technique. Using the ceramic target of the same composition and Pt(100)/ $TiO_2$ / $SiO_2$ /Si or Pt(111)/Ti/ $SiO_2$ /Si substrate, crystallization and orientation behavior as well as electric properties of the films were examined, Thickness was controlled to $3000{ AA}$ and the films were heat-treated at $650^{ circ}C{ sim}800^{ circ}C$ . The orientation and crystallization behavior were observed which showed the dependence on processing condition( $O_2$ /Ar ratio, substrate temp, annealing temp...). |
