| 저자(한글) |
최지혜,권순용,황성연,김윤정,손영진,조성실,이애경,박상현,이백희,박남균,박해찬,장헌용,홍석경,홍성주 |
| 초록 |
The electrical properties of PZT thin film capacitor on TiN/W plug structure were investigated for high density ferroelectric memory devices. In order to enhance the ferroelectric properties of PZT capacitor, the process conditions of bottom electrodes were optimized. The fabricated PZT capacitor on TiN/W plug showed good remanent polarization, leakage current, and contact resistance of TiN/W plug, which were $33 ;{ mu}C/cm^2$ , $1.2{ times}10^{-6} ;A/cm^2$ , and 5.3 ohm/contact, respectively. |
