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논문 기본정보
Preparation and Electrical Properties of Ferroelectric lt;TEX gt;$Bi_{3.3}Eu_{0.7}Ti_3O_{12}$ lt;/TEX gt; Thin Films for Memory Applications
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18 |
| ISSN | , |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | Kang, Dong-Kyun,Park, Won-Tae,Kim, Byong-Ho |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2005-01-01 |
| 초록 | Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO $_2$ /Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{ circ}C$ , the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ( $2P_r$ ) of the BET thin films annealed at $720^{ circ}C$ were $37.71{ mu}C/cm^2$ at an applied voltage of 5 V. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NPAP&cn=NPAP08120302 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| DDC 분류 | |
| 주제어 (키워드) | Eu-substituted lt,TEX gt,$Bi_4Ti_3O_{12}$ lt,/TEX gt,. liquid delivery MOCVD,microstructure |