| 초록 |
The structural properties of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films with post-annealing temperature were investigated. $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films were deposited by RF sputtering method on Pt/Ti/ $SiO_2$ /Si substrates with optimum deposition condition. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was post-annealed at 600 $^{ circ}C$ , 650 $^{ circ}C$ , 700 $^{ circ}C$ , 750 $^{ circ}C$ , 800 $^{ circ}C$ in furnace,respectively. Increasing the post-annealing temperature, the grain size, density and peak intensity of (117) and c-axis orientation were increased. The $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films that annealed at 750 $^{ circ}C$ exhibited well crystallized phase and had no vacancy and grain was uniform. but there are some secondary phases observed. At this time, the average thickness of $(Bi,Ce)_4Ti_3O_{12}(BCT)$ thin films was 2000 ${ AA}$ . |
