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논문 기본정보
Improvement of Fatigue Properties in Ferroelectric Dy-Doped Bismuth Titanate(BDT) Thin Films Deposited by Liquid Delivery MOCVD System
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8 |
| ISSN | , |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | Kang, Dong-Kyun,Park, Won-Tae,Kim, Byong-Ho |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2007-01-01 |
| 초록 | Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/ $SiO_2$ /Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{ circ}C$ at an interval of $40^{ circ}C$ . The BDT thin film annealed at $720^{ circ}C$ showed a large remanent polarization (2Pr) of $52.27 ;{ mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{ times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${ pm}5 ;V$ . These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NPAP&cn=NPAP08613415 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| DDC 분류 | |
| 주제어 (키워드) | Dysprosium-doped bismuth titanate,Liquid delivery MOCVD,Randomly-oriented,Fatigue-free |