| 초록 |
The $SrRuO_3$ /Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{ circ}C$ , deposition pressure of $1 ;{ times} ;10^{-6} ;Torr$ , and the thickness of 6 nm. The 100nm thick- $SrRuO_3$ bottom electrodes deposited above $650^{ circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0 ;{ AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick- $Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{ circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40 ;C/cm^2$ , $E_c$ of 100 kV/cm, and leakage current of about $1 ;{ times} ;10^{-7} ;A/cm^2$ at 1V. |
