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장비
장비 및 시설 기본정보
반도체 초미세 배선 충진용 웨이퍼 도금장비
장비 개요
| 기관명 | ZEUS |
|---|---|
| 장비번호 | |
| 제작사 | Rena |
| 모델명 | EPM-100F |
| 장비사양 | |
| 취득일자 | 2012-12-28 |
| 취득금액 |
보유기관 및 이용정보
| 보유기관명 | 한국생산기술연구원 |
|---|---|
| 보유기관코드 | |
| 활용범위 | |
| 활용상태 | |
| 표준코드 | C520 |
| 표준분류명 | |
| 시설장비 설명 | 1. General : - Basic 8 inch version prepared for the processing of 8 inch wafers - 1 process unit containing a fountain-type plater with rotation for the electroplating of Cu 2. Main Body - 1 main body made of PP white - Dimensions (W X D X H mm) : 465 X 1550 X 2050 - Cleanroom / greyroom separation possible: depth in cleanroom approx. 1000 mm depth in greyroom approx. 550 mm1. Process chamber - Perforated Cu plate as consumable anode located at the lower side of the chamber parallel to the cathode (substrate) - Distance between cathode and anode variable max ca. 200 mm - Rotation speed of chamber lid : 10 50 1/min - Electrolyte storage tank volume : > 25 liter - over 3 sensors for checking the liquid level in the tank - Atomatic refilling of DI-water - 2 PT 100 units for temperature control ±1° - Heat exchanger installed in the storage tank - Process temperature 20 - 60°C (only if connected to cooling water facilities) - Manual filling of the electrolyte chemistry - Diaphragm pump incl. piping for draining the chemical into a canister - Circulation system consisting of: - Pump max flow rate > 35 l/min with DIW without filter - Flow meter min flow rate > 5 l/min - 10“ filter housing 1 filter with 5 μm pore size included - Piping pneumatic valves manual valves 2. Substrate holder and mounting station - 1 substrate holders for SEMI std. 8” wafers with notch included edge exclusion at 3 mm - 1 substrate holders for SEMI std. 6” wafers with notch included edge exclusion at 3 mm - 1 mounting station for easy mounting of the substrate into the holder (for 8” wafers) - 1 handle for safe transportation of wafer holders 3. Electrical control and software - 1 forward/reverse pulse power supply by PLATING ELECTRONIC type pe86-15-20-60 max. voltage 15V / max. effective current 20A / max. pulse current 60A ripple < 0.3% of max. current (=60mA) - Software with 3 operation modes operator- process- and service mode with password protection - Storage capacity for up to 20 recipes (per plating module) with 5 process steps per recipe - Modem for remote software support - Language of software visualisation: English 4. Process performance - Thickness uniformity of plated thin film < ± 10 % with 1um thickness (5mm EE) - No gap-fill void @ trenc해당 장비는 다음과 같은 분야에서 활용될 수 있다. 반도체용 구리 배선의 single damascene 및 dual damascene 구조에서 pattern width 2 이상의 미세 패턴에 도금 충진시 void 발생 억제될 수 있도록 설계된 도금 장비로서, 1. Electro Copper plating 2. Wafer plating PCB |
| 장비이미지코드 | http://nfec.ntis.go.kr/storage/images/equip/photo/201510/.thumb/20151019103735774.jpg |
| 장비위치주소 | 인천광역시 연수구 갯벌로 156 (송도동) 열·표면기술센터 연구1동 1층 |
| NFEC 등록번호 | NFEC-2013-02-175877 |
| 예약방법 | |
| 카타로그 URL | |
| 메뉴얼 URL | |
| 원문 URL | http://www.zeus.go.kr/equip/read?equipId=Z-NTIS-0036783 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| 주제어 (키워드) |