급속열처리시스템
기관명 | ZEUS |
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장비번호 | |
제작사 | 뉴영시스템 |
모델명 | RTA 200H SPV1 |
장비사양 | |
취득일자 | 2012-10-17 |
취득금액 |
보유기관명 | 대구경북과학기술원 |
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보유기관코드 | |
활용범위 | |
활용상태 | |
표준코드 | C601 |
표준분류명 | |
시설장비 설명 | 1. Rapid thermal processing refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1100℃) on a timesscale of several seconds. 2. Such rapid heating rates are often attained by high intensity lamps. 3. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation thermal oxidation and metal alloy.1. 제작 장비명 : Single wafer type Rapid Thermal Annealing system 2. Process : RTA & RTO with vacuum (~50mTorr) or ATM 3. System Configurations 3-1. RTA System Configuration 3-1-1. 200mm RTA Chamber with close sealing type : 1set 3-1-2. Main Frame Ass'y : 1set 3-1-3. Main Power & TPR Units : 1set 3-1-4. RTA Gas Panel : 1set 3-1-5. Vacuum System : 1set 3-1-5. Temp control : Pyrometer 3-2. RTA Standard System 3-2-1. System Pressure : Vacuum type (ATM ~5.0E-2) 3-2-2. Process Gas System : Non Toxic Type 3-2-3. Gas Line per Chamber : 3 Line (N2 O2 Ar) 3-3. Standard Module Spec. 3-3-1. Chamber Unit : 1set - Quartz Tray with SiC Edge ring : for 4" 6" / 8" Si wafer - Chamber Material : Ni Coating Al with Hot wall by Heater and cooled by PCW - Chamber volume less than 18L(About chamber inner size is 240mm x 240mm x 30mm) - Process Gas Supply : N2 O2 Ar 3-3-2. Lamp Unit : 1set - Lamp Type : Tungsten Halogen Circular type - Lamp Structure : Top side - Power Controlled by TPR - Number of Control Zone : 24 Zone - Consumption Power : Max.30KVA 4. Process Guarantee SPEC. 4-1. Temp. Control Range : 상온 ~ 980℃ by Pyrometer 4.2. Temp. Reading Range : Max 1000℃ by Pyrometer 4-3. Ramp Up Rate : < 50℃/sec at Si wafer 4-4. Ramp Down Rate : < 30℃/sec at Si wafer. 4-5. Process Time : Max. 2min (980℃) Controllable / Max. 2min (1100℃) noncontrollable 4-6. Temp. Uniformity(Within Wafer Uniformity) : Dopant activation로 사용 가능함. |
장비이미지코드 | http://nfec.ntis.go.kr/storage/images/equip/photo/201301/.thumb/급속열처리시스템.jpg |
장비위치주소 | 대구 달성군 현풍면 상리 50-1 대구경북과학기술원 중앙기기센터 2층 205 |
NFEC 등록번호 | NFEC-2013-02-176068 |
예약방법 | |
카타로그 URL | |
메뉴얼 URL | |
원문 URL | http://www.zeus.go.kr/equip/read?equipId=Z-NTIS-0036424 |
첨부파일 |
과학기술표준분류 | |
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ICT 기술분류 | |
주제어 (키워드) |