| 시설장비 설명 |
1. System Test Capability : 1) The Model 1164 system tests 3D interconnect structures including Bumps and Thru-Silicon Vias (TSVs) - Electromigration (EM) : monotor resistance changes under elevated current and elevated temperature stress - Stress Migration (SM) : monotor resistance changes under temperature stress - All data is stored in ASCII and easily exported to other applications for analysis - High current capability - up to 4A per DUT - Wheatstone Bridge for accurate measurement of low-resistance devices and small changes - Better momentary behavior detection (continuous real-time measurement) - More parallelism (dedicated Kelvin SMU Wheatstone Bridge and DUT Temperature monitor per DUT - Higher package level test throughput - More package level flexibility - High capacity up to 768 duts per system - Multiple applications in one system for EM/SM TDDB/SILC/MTTDDB HCI/NBTI/BIHCI 2) Copper and Aluminum Interconnect Reliability (EM/SM) - The Model 1164 system tests aluminum and c |
