| 시설장비 설명 |
Atomic layer deposition ALD technique based on sequential self-terminating gas？solid reactions has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. The growth of material layers by ALD consists of repeating the following characteristic four steps: 1. A self-terminating reaction of the first reactant A. 2. A purge or evacuation to remove the non-reacted reactants and the gaseous reaction by-products. 3. A self-terminating reaction of the second reactant B or another treatment to activate the surface again for the reaction of the first reactant. 4. A purge or evacuation. |
