| 시설장비 설명 |
Model : E1550HT Maker : 독일 centrotherm Application - TEOS Oxide Deposition - Nitride Deposition - Poly Silicon/Amorphous Poly Silicon Deposition - LTO Deposition Information - LP31 tube 1) Process : LTO 2) Temperature : 425℃ 3) Gas : SiH4 O2 4) Pressure : 160mTorr 5) Loading type : Soft landing 6) Wafer size : 5 6inch - LP32 tube 1) Process : Poly Silicon 2) Temperature : 625℃ (Poly Silicon) 530 ℃ (Amorphous Poly Silicon) 3) Gas : SiH4 4) Pressure : 200mTorr 5) Loading type : Soft landing 6) Wafer size : 5 6inch - LP33 tube 1) Process : Nitride 2) Temperature : 774℃ 3) Gas : DCS NH3 4) Pressure : 250mTorr 5) Loading type : Soft landing 6) Wafer size : 5 6inch - LP34 tube 1) Process : TEOS 2) Temperature : 710℃ 3) Gas : TEOS (tetraethylorthosilicate) 4) Pressure : 250mTorr 5) Loading type : Soft landing 6) Wafer size : 5 6inch |
