| 시설장비 설명 |
특징 DC Magnetron sputtering 방식으로 실리콘웨이퍼상에 각종 증속 박막 형성 Information - A2 Module 1) Process : RF Etch 2) Power : 100W 3) Pressure : 1.5mTorr 4) Etch Rate : 200Å/min ± 5% (@ Thermal Oxide Film) - A3 Module 1) Process : Al-1%Si Film Sputtering 2) Temperature : 200℃ 3) DC Power : 9.6KW 4) Ar Pressure : 4mTorr 5) Target : Quntum type 6) Deposition Rate : 11000Å/min ± 5% - A5 Module 1) Process : Ti/TiN Film Sputtering 2) Temperature : 400℃ 3) DC Power (Ti/TiN) : 2.4/7.2KW 4) TiN Ar Flow : 40sccm 5) TiN N2 Flow : 100sccm 6) Target : Quntum type 7) Deposition Rate : 1500Å/min ± 5% (Ti) 600Å/min ± 5% (TiN) - A6 Module 1) Process : Alloy 2) Temperature : 580 ~ 650℃ |
