| 시설장비 설명 |
(1) Amorphous silicon hydride (a.Si:H) is the material which has been developed to apply element for drive(thin layer transistor) for cost effective solar cell or large size LCD. (2) There is trap level energy (level energy in gap) and working as a core to catch carrier or recombination and give an influence to characteristic or reliability of electronic device. (3) It is important to check the density energy profile origin relation to other physical constant of the level energy as these are required for both deep understanding the a.SI:Hs basic solid state properties and device application. Constant Photocurrent Method : CPM is used on this system. (4) This system can measure photo-absorption spectrum easily with high sensitivity by measuring photo-electronic current in the photon energy region which is smaller than that of band-gap (sub-band-gap region). (5) Monochromatic light from monochromator is radiated on the sample. Simultaneously bios applied voltage is on the sample and photo-conductivity. (6) |
