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장비 및 시설 기본정보
플라즈마 화학 기상 반응 챔버
장비 개요
| 기관명 | ZEUS |
|---|---|
| 장비번호 | |
| 제작사 | 에스엔텍 |
| 모델명 | Main Processing Chamber |
| 장비사양 | |
| 취득일자 | 2010-09-28 |
| 취득금액 |
보유기관 및 이용정보
| 보유기관명 | 한국에너지기술연구원 |
|---|---|
| 보유기관코드 | |
| 활용범위 | |
| 활용상태 | |
| 표준코드 | C507 |
| 표준분류명 | |
| 시설장비 설명 | 한글키워드 플라즈마 화학기상증착기 영문키워드 PECVD PECVD 란 ? PECVD system is batch-production equipment that supports the application of silicon based thin film process offering step coverage and gap filling required during semiconductor fabrication and solar cell device processes including the applications of passivation isolation and dielectric insulation depositions. 200㎜ × 200㎜ PECVD. Plasma Enhanced Chemical Vapor Deposition is mainly used for the deposition of dielectric films and passivation films like silicon oxide or nitride or ONO layers at low temperature. It can be also used for SiC layers of poly-Silicon deposition. The necessary energy for the chemical reaction is not introduced by heating the whole reaction chamber but just by heated gas or plasma. It is the best method if dopant diffusion has to be kept low wafers have to be treated which are sensible to high temperature or have been aluminium metallized already. The thermal budget of the treated wafers stays low with PECVD. Using an RF generator the plasma is formed in the reaction chamber. It contains reactive ions and radicals. The growth of the deposit starts easily because of the activation and cleaning of the surface by the more of less intense bombarding with ions from the plasma. You get good adhesion and high growth rates.The use of perfluorinated gases such as NF3 CF4 or SF6 for PECVD (plasma enhanced chemical vapor deposition) chamber cleaning has a much higher impact on global warming than does the use of onsite-generated F2. This holds true even when supposing that in the future much more effort is paid for the correct abatement and a leak-free supply and take-back chain. This paper will discuss the steps available to the PV industry for control and reduction of carbon emissions in the chamber cleaning process. The properties of the coated layers can be better influenced with PECVD |
| 장비이미지코드 | http://nfec.ntis.go.kr/storage/images/equip/photo/201012/.thumb/20101228155422.jpg |
| 장비위치주소 | 울산 울주군 언양읍 반연리 울산과학기술대학교 102동505호 한국에너지연구원 울산과학기술대학교 5층 102동505호 |
| NFEC 등록번호 | NFEC-2010-12-130894 |
| 예약방법 | |
| 카타로그 URL | |
| 메뉴얼 URL | |
| 원문 URL | http://www.zeus.go.kr/equip/read?equipId=Z-NTIS-0020858 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| 주제어 (키워드) |