| 보유기관명 |
한국표준과학연구원 |
| 보유기관코드 |
|
| 활용범위 |
|
| 활용상태 |
|
| 표준코드 |
|
| 표준분류명 |
|
| 시설장비 설명 |
The TiN thin films were deposited on p-type silicon (100) substrates using reactive planar DC magnetron sputtering system. The target was 99.99% pure Ti. The reactive sputter gas was a mixture of Ar (99.999%) and N2 (99.999%) with the ratio Ar (97%) and N2 (3%) by volume. Structural characterization of the coating was done using X-ray diffraction (XRD). The surface roughness of the coating was determined using an Atomic Force Microscope (AFM). The reflectivity of thin films was investigated by a spectrophotometer system. The X-ray diffraction measurements showed that by increasing the substrate temperature during the growth change in crystalline structure will occur. The crystallite size of the films determined by Scherrer’s equation and the crystallite size measured by AFM also increased by increasing the substrate growth temperature. The surface reflectivity measurements indicate that by increasing the substrate growth temperature the optical properties of the films changes. The change in optical properties and crystalline structure of the films indicate that substrate growth temperature plays an important role in structure and morphology of the grown layers. |
| 장비이미지코드 |
http://nfec.ntis.go.kr/storage/images/equip/photo/201107/.thumb/20110701111946.JPG |
| 장비위치주소 |
대전광역시 유성구 가정로 209 계측기기동(202) |
| NFEC 등록번호 |
NFEC-2011-06-145808 |
| 예약방법 |
|
| 카타로그 URL |
|
| 메뉴얼 URL |
|
| 원문 URL |
http://www.zeus.go.kr/equip/read?equipId=Z-NTIS-0029369 |
| 첨부파일 |
|
