| 시설장비 설명 |
특징 반응가스를 고진공하의 반응로에 유입시켜 강한 전기장 및 자기장을 이용하여 이온화시켜 반도체용 각종 박막에 대해 건식식각으로 미세 패턴을 형상 함 Information - Chamber A 1) Process : Metal Etch 2) Gas : BCl3 SF6 N2 Cl2 3) Etch Process Specification a. Uniformity - Within wafer : ≤ ± 5% - Wafer to wafer : ≤ ± 5% b. Etch rate - TiW : ≥ 1900Å/min - TiN : ≥ 1500Å/min - Al : ≥ 5300Å/min c. Selectivity - TiW to PR ≥ 1.5:1 - TiN to PR ≥ 1.5:1 - Al to PR ≥ 1.5:1 d. Etch Profile : ≥ 86° - Chamber B 1) Process : Oxide Nitride Etch 2) Gas : CHF3 CF4 O2 Ar NF3 3) Etch Process Specification a. Uniformity - Within wafer : ≤ ± 5% - Wafer to wafer : ≤ ± 5% b. Etch rate - SiO2 (Thermal) : ≥ 2500Å/min - TEOS : ≥ 2600Å/min - Si3N4 : ≥ 4000Å/min c. Selectivity - Oxide to PR ≥ 4.5:1 - Nitride to PR ≥ 10:1 d. Etching Profile : ≥ 87° - Chamber C 1) Process : PR Strip 2) Gas : HBr NF3 SiF4 CF4 He-O2 SF6 Cl2 3) Strip Process Specification a. Uniformity - Within wafer : ≤ ± 7% - Wafer to wafer : ≤ ± 7% b. Etch rate - Strip rate ≥ 29000Å/min |
